MPBT20N65EF PDF and Equivalents Search

 

MPBT20N65EF Specs and Replacement

Type Designator: MPBT20N65EF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 166 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 39 nS

Coesⓘ - Output Capacitance, typ: 69 pF

Package: TO-3P

 MPBT20N65EF Substitution

- IGBTⓘ Cross-Reference Search

 

MPBT20N65EF datasheet

 ..1. Size:1121K  cn marching-power
 mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf pdf_icon

MPBT20N65EF

MPBX20N65EF 650V-20A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBP20N65EF MP20N65EF TO-220 MPBA20N65EF MP20N65EF TO-220F MPBC20N6... See More ⇒

Specs: MPBD10N65EF, MPBP15N65EF, MPBA15N65EF, MPBC15N65EF, MPBP20N65EF, MPBA20N65EF, MPBC20N65EF, MPBW20N65EF, GT30G122, MPBP40N65EH, MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E, MPBW15N120BF, MPBW25N120BF

Keywords - MPBT20N65EF transistor spec

 MPBT20N65EF cross reference
 MPBT20N65EF equivalent finder
 MPBT20N65EF lookup
 MPBT20N65EF substitution
 MPBT20N65EF replacement

 

 

 

 

↑ Back to Top
.