All IGBT. MPBQ100N120E Datasheet

 

MPBQ100N120E Datasheet and Replacement


   Type Designator: MPBQ100N120E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP100N120E
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 112 nS
   Coesⓘ - Output Capacitance, typ: 377 pF
   Qg ⓘ - Total Gate Charge, typ: 583 nC
   Package: TO247
 

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MPBQ100N120E Datasheet (PDF)

 ..1. Size:837K  cn marching-power
 mpbq100n120e.pdf pdf_icon

MPBQ100N120E

MPBQ100N120E1200V-100A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Industrial UPSpositive temperature coefficient in VCEsat Charger Low VCEsatfast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ100N120E MP100N120E

 9.1. Size:627K  cn marching-power
 mpbq120n65gsf.pdf pdf_icon

MPBQ100N120E

MPBQ120N65GSF650V-120A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor drivespositive temperature coefficient in VCEsat Main inverter Low VCEsatfast switching PTC heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBQ120

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MPBW40N65BU

Keywords - MPBQ100N120E transistor datasheet

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