MPBQ100N120E PDF and Equivalents Search

 

MPBQ100N120E Specs and Replacement

Type Designator: MPBQ100N120E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 535 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 112 nS

Coesⓘ - Output Capacitance, typ: 377 pF

Package: TO247

 MPBQ100N120E Substitution

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MPBQ100N120E datasheet

 ..1. Size:837K  cn marching-power
 mpbq100n120e.pdf pdf_icon

MPBQ100N120E

MPBQ100N120E 1200V-100A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Industrial UPS positive temperature coefficient in VCEsat Charger Low VCEsat fast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distribution Type Marking Package Code MPBQ100N120E MP100N120E ... See More ⇒

 9.1. Size:627K  cn marching-power
 mpbq120n65gsf.pdf pdf_icon

MPBQ100N120E

MPBQ120N65GSF 650V-120A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor drives positive temperature coefficient in VCEsat Main inverter Low VCEsat fast switching PTC heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBQ120... See More ⇒

Specs: MPBA15N65EF, MPBC15N65EF, MPBP20N65EF, MPBA20N65EF, MPBC20N65EF, MPBW20N65EF, MPBT20N65EF, MPBP40N65EH, MBQ40T65FDSC, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E, MPBW15N120BF, MPBW25N120BF, MPBW30N120E, MPBW30N65E

Keywords - MPBQ100N120E transistor spec

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