MPBQ120N65GSF Datasheet and Replacement
Type Designator: MPBQ120N65GSF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP120N65GSF
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 834 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 220 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 473 pF
Qg ⓘ - Total Gate Charge, typ: 404 nC
Package: TO247
MPBQ120N65GSF substitution
MPBQ120N65GSF Datasheet (PDF)
mpbq120n65gsf.pdf

MPBQ120N65GSF650V-120A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor drivespositive temperature coefficient in VCEsat Main inverter Low VCEsatfast switching PTC heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBQ120
mpbq100n120e.pdf

MPBQ100N120E1200V-100A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Industrial UPSpositive temperature coefficient in VCEsat Charger Low VCEsatfast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ100N120E MP100N120E
Datasheet: MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , RJH60F7BDPQ-A0 , MPBQ50N120B , MPBQ75N120BF , MPBQ75N120E , MPBW15N120BF , MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF .
History: SGTP40V120F2P7
Keywords - MPBQ120N65GSF transistor datasheet
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History: SGTP40V120F2P7



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