MPBQ75N120E IGBT. Datasheet pdf. Equivalent
Type Designator: MPBQ75N120E
Type: IGBT + Anti-Parallel Diode
Marking Code: MP75N120E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 86 nS
Coesⓘ - Output Capacitance, typ: 253 pF
Qgⓘ - Total Gate Charge, typ: 750 nC
Package: TO247
MPBQ75N120E Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPBQ75N120E Datasheet (PDF)
mpbq75n120e.pdf
MPBQ75N120E1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Industrial UPSpositive temperature coefficient in VCEsat Charger Low VCEsatfast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120E MP75N120E TO-2
mpbq75n120bf.pdf
MPBQ75N120BF1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Solar Inverter High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120BF MP75N120BF
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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