MPBQ75N120E PDF and Equivalents Search

 

MPBQ75N120E Specs and Replacement

Type Designator: MPBQ75N120E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 416 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃

tr ⓘ - Rise Time, typ: 86 nS

Coesⓘ - Output Capacitance, typ: 253 pF

Package: TO247

 MPBQ75N120E Substitution

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MPBQ75N120E datasheet

 ..1. Size:845K  cn marching-power
 mpbq75n120e.pdf pdf_icon

MPBQ75N120E

MPBQ75N120E 1200V-75A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Industrial UPS positive temperature coefficient in VCEsat Charger Low VCEsat fast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distribution Type Marking Package Code MPBQ75N120E MP75N120E TO-2... See More ⇒

 4.1. Size:2008K  cn marching-power
 mpbq75n120bf.pdf pdf_icon

MPBQ75N120E

MPBQ75N120BF 1200V-75A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Frequency converter positive temperature coefficient in VCEsat UPS Low VCEsat fast switching Solar Inverter High ruggedness, good thermal stability Welding Very tight parameter distribution Type Marking Package Code MPBQ75N120BF MP75N120BF ... See More ⇒

Specs: MPBC20N65EF, MPBW20N65EF, MPBT20N65EF, MPBP40N65EH, MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, GT60N321, MPBW15N120BF, MPBW25N120BF, MPBW30N120E, MPBW30N65E, MPBW40N120BF, MPBW40N120EH, MPBW40N120ES, MPBW40N65BU

Keywords - MPBQ75N120E transistor spec

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