All IGBT. MPBQ75N120E Datasheet

 

MPBQ75N120E Datasheet and Replacement


   Type Designator: MPBQ75N120E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP75N120E
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 86 nS
   Coesⓘ - Output Capacitance, typ: 253 pF
   Qg ⓘ - Total Gate Charge, typ: 750 nC
   Package: TO247
 

 MPBQ75N120E substitution

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MPBQ75N120E Datasheet (PDF)

 ..1. Size:845K  cn marching-power
 mpbq75n120e.pdf pdf_icon

MPBQ75N120E

MPBQ75N120E1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Industrial UPSpositive temperature coefficient in VCEsat Charger Low VCEsatfast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120E MP75N120E TO-2

 4.1. Size:2008K  cn marching-power
 mpbq75n120bf.pdf pdf_icon

MPBQ75N120E

MPBQ75N120BF1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Solar Inverter High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120BF MP75N120BF

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: 6MBI100F-060

Keywords - MPBQ75N120E transistor datasheet

 MPBQ75N120E cross reference
 MPBQ75N120E equivalent finder
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 MPBQ75N120E replacement

 

 
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