MPBW15N120BF Datasheet and Replacement
Type Designator: MPBW15N120BF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP15N120BF
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 214 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 81 pF
Qgⓘ - Total Gate Charge, typ: 94 nC
Package: TO247
- IGBT Cross-Reference
MPBW15N120BF Datasheet (PDF)
mpbw15n120bf.pdf

MPBW15N120BF1200V-15A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW15N120BF MP15N120BF TO-247-3Maximum Rated Values
Datasheet: MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , MPBQ50N120B , MPBQ75N120BF , MPBQ75N120E , IRG4PC40W , MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E .
History: STGB8NC60K | AOTF15B65MQ1
Keywords - MPBW15N120BF transistor datasheet
MPBW15N120BF cross reference
MPBW15N120BF equivalent finder
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History: STGB8NC60K | AOTF15B65MQ1



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