MPBW15N120BF Datasheet and Replacement
Type Designator: MPBW15N120BF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 214 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 81 pF
Package: TO247
MPBW15N120BF substitution
MPBW15N120BF Datasheet (PDF)
mpbw15n120bf.pdf
MPBW15N120BF1200V-15A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW15N120BF MP15N120BF TO-247-3Maximum Rated Values
Datasheet: MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , MPBQ50N120B , MPBQ75N120BF , MPBQ75N120E , XNF15N60T , MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E .
History: MPGC50N65E
Keywords - MPBW15N120BF transistor datasheet
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History: MPGC50N65E
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