MPBW15N120BF Specs and Replacement
Type Designator: MPBW15N120BF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 214 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 81 pF
Package: TO247
MPBW15N120BF Substitution - IGBT ⓘ Cross-Reference Search
MPBW15N120BF datasheet
mpbw15n120bf.pdf
MPBW15N120BF 1200V-15A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Frequency converter positive temperature coefficient in VCEsat UPS Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW15N120BF MP15N120BF TO-247-3 Maximum Rated Values ... See More ⇒
Specs: MPBW20N65EF, MPBT20N65EF, MPBP40N65EH, MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E, CRG75T65AK5HD, MPBW25N120BF, MPBW30N120E, MPBW30N65E, MPBW40N120BF, MPBW40N120EH, MPBW40N120ES, MPBW40N65BU, MPBW40N65E
Keywords - MPBW15N120BF transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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