MPBW30N120E Specs and Replacement
Type Designator: MPBW30N120E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 68 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO247
MPBW30N120E Substitution - IGBTⓘ Cross-Reference Search
MPBW30N120E datasheet
mpbw30n120e.pdf
MPBW30N120E 1200V-30A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Welding positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package MPBW30N120E MP30N120E TO-247-3L Maximum Rated Values Parameter Symbol Value Uni... See More ⇒
mpbw30n65e.pdf
MPBW30N65E 650V-30A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBW30N65E MP30N65E TO-247-3 ... See More ⇒
Specs: MPBP40N65EH, MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E, MPBW15N120BF, MPBW25N120BF, IKW40N65WR5, MPBW30N65E, MPBW40N120BF, MPBW40N120EH, MPBW40N120ES, MPBW40N65BU, MPBW40N65E, MPBW50N65E, MPBW50N65ED
Keywords - MPBW30N120E transistor spec
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History: AOK40B65HQ3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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