All IGBT. MPBW30N65E Datasheet

 

MPBW30N65E IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBW30N65E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP30N65E
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 238 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.36 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 109 pF
   Qgⓘ - Total Gate Charge, typ: 96 nC
   Package: TO247

 MPBW30N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBW30N65E Datasheet (PDF)

 ..1. Size:1469K  cn marching-power
 mpbw30n65e.pdf

MPBW30N65E MPBW30N65E

MPBW30N65E650V-30A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW30N65E MP30N65E TO-247-3

 7.1. Size:522K  cn marching-power
 mpbw30n120e.pdf

MPBW30N65E MPBW30N65E

MPBW30N120E1200V-30A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Weldingpositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking PackageMPBW30N120E MP30N120E TO-247-3LMaximum Rated ValuesParameter Symbol Value Uni

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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