MPBW30N65E Datasheet and Replacement
Type Designator: MPBW30N65E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 238 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.36 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 109 pF
Package: TO247
- IGBT Cross-Reference
MPBW30N65E Datasheet (PDF)
mpbw30n65e.pdf

MPBW30N65E650V-30A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW30N65E MP30N65E TO-247-3
mpbw30n120e.pdf

MPBW30N120E1200V-30A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Weldingpositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking PackageMPBW30N120E MP30N120E TO-247-3LMaximum Rated ValuesParameter Symbol Value Uni
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: SGH10N60RUFD | HGTD3N60C3 | 1MBI600LN-060 | IXSM45N100 | HGTD1N120CNS | FF300R07KE4 | KGT25N120KDA
Keywords - MPBW30N65E transistor datasheet
MPBW30N65E cross reference
MPBW30N65E equivalent finder
MPBW30N65E lookup
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History: SGH10N60RUFD | HGTD3N60C3 | 1MBI600LN-060 | IXSM45N100 | HGTD1N120CNS | FF300R07KE4 | KGT25N120KDA



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