MPBW30N65E IGBT. Datasheet pdf. Equivalent
Type Designator: MPBW30N65E
Type: IGBT + Anti-Parallel Diode
Marking Code: MP30N65E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 238 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.36 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 109 pF
Qgⓘ - Total Gate Charge, typ: 96 nC
Package: TO247
MPBW30N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPBW30N65E Datasheet (PDF)
mpbw30n65e.pdf
MPBW30N65E650V-30A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW30N65E MP30N65E TO-247-3
mpbw30n120e.pdf
MPBW30N120E1200V-30A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Weldingpositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking PackageMPBW30N120E MP30N120E TO-247-3LMaximum Rated ValuesParameter Symbol Value Uni
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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