MPBW30N65E PDF and Equivalents Search

 

MPBW30N65E Specs and Replacement

Type Designator: MPBW30N65E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 238 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.36 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 109 pF

Package: TO247

 MPBW30N65E Substitution

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MPBW30N65E datasheet

 ..1. Size:1469K  cn marching-power
 mpbw30n65e.pdf pdf_icon

MPBW30N65E

MPBW30N65E 650V-30A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBW30N65E MP30N65E TO-247-3 ... See More ⇒

 7.1. Size:522K  cn marching-power
 mpbw30n120e.pdf pdf_icon

MPBW30N65E

MPBW30N120E 1200V-30A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Welding positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package MPBW30N120E MP30N120E TO-247-3L Maximum Rated Values Parameter Symbol Value Uni... See More ⇒

Specs: MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E, MPBW15N120BF, MPBW25N120BF, MPBW30N120E, GT30F125, MPBW40N120BF, MPBW40N120EH, MPBW40N120ES, MPBW40N65BU, MPBW40N65E, MPBW50N65E, MPBW50N65ED, MPBW50N65EH

Keywords - MPBW30N65E transistor spec

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