MPBW40N65E Datasheet and Replacement
Type Designator: MPBW40N65E
Type: IGBT + Anti-Parallel Diode
Marking Code: MP40N65E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 110 nC
Package: TO247
- IGBT Cross-Reference
MPBW40N65E Datasheet (PDF)
mpbw40n65e.pdf
MPBW40N65E650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW40N65E MP40N65E TO-247-3
mpbw40n65bu.pdf
MPBW40N65BU 650V 40AIGBT UPS PFC TO-247 MPBW40N65BUMP40N65BUTO2471
mpbw40n65bh.pdf
MPBW40N65BH 650V 40A IGBT UPS PFC TO-247 MPBW40N65BH MP40N65BH TO-247 1 -
mpbw40n60bf.pdf
MPBW40N60BF 600V 40A IGBT UPS TO-247 MPBW40N60BF MP40N60BF TO-247 1 -
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MPBW40N120BF
Keywords - MPBW40N65E transistor datasheet
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History: MPBW40N120BF
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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