MPGC50N65E Datasheet. Specs and Replacement

Type Designator: MPGC50N65E  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 62 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO-263

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MPGC50N65E datasheet

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MPGC50N65E

MPGC50N65E 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution C Type Marking Package Code MPGC50N65E MPG50N65E TO-263... See More ⇒

Specs: MPBW40N120ES, MPBW40N65BU, MPBW40N65E, MPBW50N65E, MPBW50N65ED, MPBW50N65EH, MPBW50N65ES, MPBW75N65E, FGL60N100BNTD, MPGW40N65E, DAG075F065P1, DAHF075G120SA, DAHF100G120SA, DAHF150G120SA, DAHF150G120SB, DAHF200G120SB, DAHF225G120SB

Keywords - MPGC50N65E transistor spec

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