MPGC50N65E Specs and Replacement
Type Designator: MPGC50N65E
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Package: TO-263
MPGC50N65E Substitution
MPGC50N65E specs
mpgc50n65e.pdf
MPGC50N65E 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution C Type Marking Package Code MPGC50N65E MPG50N65E TO-263... See More ⇒
Specs: MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , IRG7S313U , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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