MPGC50N65E IGBT. Datasheet pdf. Equivalent
Type Designator: MPGC50N65E
Type: IGBT + Anti-Parallel Diode
Marking Code: MPG50N65E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Qgⓘ - Total Gate Charge, typ: 230 nC
Package: TO-263
MPGC50N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPGC50N65E Datasheet (PDF)
mpgc50n65e.pdf
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MPGC50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionCType Marking Package CodeMPGC50N65E MPG50N65E TO-263
Datasheet: MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , TGAN40N60FD , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB .
![MPGC50N65E](https://alltransistors.com/images/us.png)
![MPGC50N65E](https://alltransistors.com/images/es.png)
![MPGC50N65E](https://alltransistors.com/images/ru.png)
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