All IGBT. MPGC50N65E Datasheet

 

MPGC50N65E Datasheet and Replacement


   Type Designator: MPGC50N65E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MPG50N65E
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 175 pF
   Qg ⓘ - Total Gate Charge, typ: 230 nC
   Package: TO-263
 

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MPGC50N65E Datasheet (PDF)

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MPGC50N65E

MPGC50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionCType Marking Package CodeMPGC50N65E MPG50N65E TO-263

Datasheet: MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , IRGP4062D , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB .

History: STGD8NC60K | MPBW50N65EH

Keywords - MPGC50N65E transistor datasheet

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