MPGW40N65E IGBT. Datasheet pdf. Equivalent
Type Designator: MPGW40N65E
Type: IGBT
Marking Code: MPG40N65E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 110 nC
Package: TO247
MPGW40N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPGW40N65E Datasheet (PDF)
mpgw40n65e.pdf
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MPGW40N65E650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPGW40N65E MPG40N65E TO-247-3
Datasheet: MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , IRGB20B60PD1 , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB .
![MPGW40N65E](https://alltransistors.com/images/us.png)
![MPGW40N65E](https://alltransistors.com/images/es.png)
![MPGW40N65E](https://alltransistors.com/images/ru.png)
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