MPGW40N65E Datasheet and Replacement
Type Designator: MPGW40N65E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
- IGBT Cross-Reference
MPGW40N65E Datasheet (PDF)
mpgw40n65e.pdf
MPGW40N65E650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPGW40N65E MPG40N65E TO-247-3
Datasheet: MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , FGW75N60HD , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - MPGW40N65E transistor datasheet
MPGW40N65E cross reference
MPGW40N65E equivalent finder
MPGW40N65E lookup
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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