All IGBT. MPGW40N65E Datasheet

 

MPGW40N65E Datasheet and Replacement


   Type Designator: MPGW40N65E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247
 

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MPGW40N65E Datasheet (PDF)

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MPGW40N65E

MPGW40N65E650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPGW40N65E MPG40N65E TO-247-3

Datasheet: MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , NCE80TD65BT , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB .

History: APT15GT120BRDQ1G | GT8G121LB | MIXA600AF650TSF | IXGT15N120C | MIXA81H1200EH | BLG60T65FDL-K | IXXX200N65B4

Keywords - MPGW40N65E transistor datasheet

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