MPGW40N65E Specs and Replacement
Type Designator: MPGW40N65E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
MPGW40N65E Substitution - IGBT ⓘ Cross-Reference Search
MPGW40N65E datasheet
mpgw40n65e.pdf
MPGW40N65E 650V-40A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPGW40N65E MPG40N65E TO-247-3 ... See More ⇒
Specs: MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , IRGP4062D , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB .
History: TT060U065FQ
Keywords - MPGW40N65E transistor spec
MPGW40N65E cross reference
MPGW40N65E equivalent finder
MPGW40N65E lookup
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MPGW40N65E replacement
History: TT060U065FQ
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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