DAG075F065P1 IGBT. Datasheet pdf. Equivalent
Type Designator: DAG075F065P1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 468 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 187 pF
Qgⓘ - Total Gate Charge, typ: 156 nC
Package: TO247
DAG075F065P1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DAG075F065P1 Datasheet (PDF)
dag075f065p1.pdf
DAG075F065P1Power Pack Silicon Trench Field FS IGBTTO-247-3LIGBT 650V / 75A Features Fast Switching Field Stop IGBT Trench TechnologyLow Saturation Voltage: G = Gate, C = Collector, E = EmitterVCE(sat) = 2.0V @ IC = 75A Low Switching Loss Superfast Diodes High Efficient Turn-on di/dt ControllabilityApplications Photovoltaic converters
Datasheet: MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , MPGW40N65E , IRG4PC40UD , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB , DAZF075G120SCA .
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