DAG075F065P1 Specs and Replacement
Type Designator: DAG075F065P1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 468 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 187 pF
Package: TO247
DAG075F065P1 Substitution - IGBT ⓘ Cross-Reference Search
DAG075F065P1 datasheet
dag075f065p1.pdf
DAG075F065P1 Power Pack Silicon Trench Field FS IGBT TO-247-3L IGBT 650V / 75A Features Fast Switching Field Stop IGBT Trench Technology Low Saturation Voltage G = Gate, C = Collector, E = Emitter VCE(sat) = 2.0V @ IC = 75A Low Switching Loss Superfast Diodes High Efficient Turn-on di/dt Controllability Applications Photovoltaic converters ... See More ⇒
Specs: MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , MPGW40N65E , GT30F132 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB , DAZF075G120SCA .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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