All IGBT. DAG075F065P1 Datasheet

 

DAG075F065P1 Datasheet and Replacement


   Type Designator: DAG075F065P1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 66 nS
   Coesⓘ - Output Capacitance, typ: 187 pF
   Package: TO247
      - IGBT Cross-Reference

 

DAG075F065P1 Datasheet (PDF)

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DAG075F065P1

DAG075F065P1Power Pack Silicon Trench Field FS IGBTTO-247-3LIGBT 650V / 75A Features Fast Switching Field Stop IGBT Trench TechnologyLow Saturation Voltage: G = Gate, C = Collector, E = EmitterVCE(sat) = 2.0V @ IC = 75A Low Switching Loss Superfast Diodes High Efficient Turn-on di/dt ControllabilityApplications Photovoltaic converters

Datasheet: MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , MPGW40N65E , IHW15N120R3 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB , DAHF225G120SB , DAHF300G120SB , DAZF075G120SCA .

History: SGTP75V65SDS1P7 | IXST35N120B | JT020N065SED | MSG100D350FHS | IRG4BC20F | MSG20T65HPT1 | MSG40T120FQC

Keywords - DAG075F065P1 transistor datasheet

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