2SH30 Specs and Replacement
Type Designator: 2SH30
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO3P
2SH30 Substitution - IGBTⓘ Cross-Reference Search
2SH30 datasheet
2sh30.pdf
2SH30 Silicon N Channel IGBT High Speed Power Switching ADE-208-792A(Z) 2nd. Edition May 1999 Features High speed switching Low on-voltage Outline TO 3P C G 1. Gate E 1 2. Collector (Flange) 2 3. Emitter 3 2SH30 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 600 V Gate to Emitter voltage VGES 20 V Collecto... See More ⇒
Specs: 2SH19, 2SH20, 2SH21, 2SH22, 2SH26, 2SH27, 2SH28, 2SH29, NGTB75N65FL2, 2SH31, HCKZ75N65BH2, IGC07T120T8L, IGC07T120T6L, APT100GF60LR, APT11GF120BRD, IGC07R60DE, IGC07R60D
Keywords - 2SH30 transistor spec
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History: 2SH31 | 2SH26 | 2SH22 | 2SH27
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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