2SH30 IGBT. Datasheet pdf. Equivalent
Type Designator: 2SH30
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 280 nS
Package: TO3P
2SH30 Transistor Equivalent Substitute - IGBT Cross-Reference Search
2SH30 Datasheet (PDF)
2sh30.pdf
2SH30Silicon N Channel IGBTHigh Speed Power SwitchingADE-208-792A(Z)2nd. EditionMay 1999Features High speed switching Low on-voltageOutlineTO3PCG1. GateE12. Collector (Flange)23. Emitter32SH30Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to Emitter voltage VCES 600 VGate to Emitter voltage VGES 20 VCollecto
Datasheet: 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , FGL60N100BNTD , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2