All IGBT. AOB30B65LN2V Datasheet

 

AOB30B65LN2V IGBT. Datasheet pdf. Equivalent


   Type Designator: AOB30B65LN2V
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 227 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 92 pF
   Package: TO263

 AOB30B65LN2V Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOB30B65LN2V Datasheet (PDF)

 ..1. Size:831K  aosemi
 aob30b65ln2v.pdf

AOB30B65LN2V AOB30B65LN2V

AOB30B65LN2VTM650V, 30A AlphaIGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE AEC-Q101 qualified 650V 650V breakdown voltageIC (TC=100 30AC) Low Vce(sat) and fast turn-on speedVCE(sat) (TJ=25 1.86VC) Very low Vf and Qrr Low turn-off switching loss and softness Very good EMI behavior High ruggedness and temperature stable behav

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top