AOB30B65LN2V PDF and Equivalents Search

 

AOB30B65LN2V Specs and Replacement

Type Designator: AOB30B65LN2V

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 227 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 92 pF

Package: TO263

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AOB30B65LN2V datasheet

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AOB30B65LN2V

AOB30B65LN2V TM 650V, 30A AlphaIGBT AEC-Q101 Qualified General Description Product Summary VCE AEC-Q101 qualified 650V 650V breakdown voltage IC (TC=100 30A C) Low Vce(sat) and fast turn-on speed VCE(sat) (TJ=25 1.86V C) Very low Vf and Qrr Low turn-off switching loss and softness Very good EMI behavior High ruggedness and temperature stable behav... See More ⇒

Specs: DAZF100G120SCA , DAZF100G120XCA , DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , FGA25N120ANTD , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E .

History: MPBW40N65BU

Keywords - AOB30B65LN2V transistor spec

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