All IGBT. AOB30B65LN2V Datasheet

 

AOB30B65LN2V Datasheet and Replacement


   Type Designator: AOB30B65LN2V
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 227 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 92 pF
   Package: TO263
 

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AOB30B65LN2V Datasheet (PDF)

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AOB30B65LN2V

AOB30B65LN2VTM650V, 30A AlphaIGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE AEC-Q101 qualified 650V 650V breakdown voltageIC (TC=100 30AC) Low Vce(sat) and fast turn-on speedVCE(sat) (TJ=25 1.86VC) Very low Vf and Qrr Low turn-off switching loss and softness Very good EMI behavior High ruggedness and temperature stable behav

Datasheet: DAZF100G120SCA , DAZF100G120XCA , DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , RJP30E2DPP-M0 , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E .

History: BSM100GAL120DLCK | IXGH30N60C3D1 | IKY50N120CH3 | SKM200GAR123D

Keywords - AOB30B65LN2V transistor datasheet

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