All IGBT. AOBS30B65LN Datasheet

 

AOBS30B65LN Datasheet and Replacement


   Type Designator: AOBS30B65LN
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 227 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 77 pF
   Package: TO263
 

 AOBS30B65LN substitution

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AOBS30B65LN Datasheet (PDF)

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AOBS30B65LN

AOBS30B65LNTM650V, 30A Alpha IGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE 650V breakdown voltage 650V Low Vce(sat) and fast turn-on speedIC (TC=100 30AC) High ruggedness and temperature stable behaviorVCE(sat) (TJ=25 1.86VC) Automotive qualifiedApplications Discharge switch Relay replacement PTC heaterTO-263C D2PAK

Datasheet: DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , RJP30H1DPD , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 .

History: APT15GP60KG | IXEH40N120D1

Keywords - AOBS30B65LN transistor datasheet

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