All IGBT. AOBS30B65LN Datasheet

 

AOBS30B65LN IGBT. Datasheet pdf. Equivalent


   Type Designator: AOBS30B65LN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 227 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 77 pF
   Qgⓘ - Total Gate Charge, typ: 52 nC
   Package: TO263

 AOBS30B65LN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOBS30B65LN Datasheet (PDF)

 ..1. Size:529K  aosemi
aobs30b65ln.pdf

AOBS30B65LN
AOBS30B65LN

AOBS30B65LNTM650V, 30A Alpha IGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE 650V breakdown voltage 650V Low Vce(sat) and fast turn-on speedIC (TC=100 30AC) High ruggedness and temperature stable behaviorVCE(sat) (TJ=25 1.86VC) Automotive qualifiedApplications Discharge switch Relay replacement PTC heaterTO-263C D2PAK

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top