AOBS30B65LN PDF and Equivalents Search

 

AOBS30B65LN Specs and Replacement

Type Designator: AOBS30B65LN

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 227 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.86 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 77 pF

Package: TO263

 AOBS30B65LN Substitution

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AOBS30B65LN datasheet

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AOBS30B65LN

AOBS30B65LN TM 650V, 30A Alpha IGBT AEC-Q101 Qualified General Description Product Summary VCE 650V breakdown voltage 650V Low Vce(sat) and fast turn-on speed IC (TC=100 30A C) High ruggedness and temperature stable behavior VCE(sat) (TJ=25 1.86V C) Automotive qualified Applications Discharge switch Relay replacement PTC heater TO-263 C D2PAK... See More ⇒

Specs: DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , SGT40N60NPFDPN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 .

History: MPBW50N65ED

Keywords - AOBS30B65LN transistor spec

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