All IGBT. AOD8B65MQ1 Datasheet

 

AOD8B65MQ1 IGBT. Datasheet pdf. Equivalent


   Type Designator: AOD8B65MQ1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 89 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Package: TO252

 AOD8B65MQ1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOD8B65MQ1 Datasheet (PDF)

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 aod8b65mq1.pdf

AOD8B65MQ1 AOD8B65MQ1

AOD8B65MQ1TM 650V, 8A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.8VC) diode Very good EMI performance with lower turn-on switching losses Hi

Datasheet: AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , RJH30E2DPP , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 .

 

 
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