AOD8B65MQ1 PDF and Equivalents Search

 

AOD8B65MQ1 Specs and Replacement

Type Designator: AOD8B65MQ1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 89 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO252

 AOD8B65MQ1 Substitution

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AOD8B65MQ1 datasheet

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AOD8B65MQ1

AOD8B65MQ1 TM 650V, 8A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 8A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 1.8V C) diode Very good EMI performance with lower turn-on switching losses Hi... See More ⇒

Specs: AOBS30B65LN, AOD5B65M1E, AOD5B65M1H, AOD5B65MQ1E, AOD5B65N1, AOD6B60M1, AOD6B65MQ1E, AOD7B65M3, IHW20N120R3, AOGF40B65H2AL, AOGF60B65H2AL, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1, AOK20B135E1, AOK20B65M1

Keywords - AOD8B65MQ1 transistor spec

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