All IGBT. AOD8B65MQ1 Datasheet

 

AOD8B65MQ1 Datasheet and Replacement


   Type Designator: AOD8B65MQ1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 89 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Package: TO252
      - IGBT Cross-Reference

 

AOD8B65MQ1 Datasheet (PDF)

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AOD8B65MQ1

AOD8B65MQ1TM 650V, 8A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.8VC) diode Very good EMI performance with lower turn-on switching losses Hi

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: VS-GB100LH120N | CM75RL-24NF | VS-25MT060WFAPBF | BT15T60A8F | IQGB300N120I4 | NCE15TD65BF | 2MBI900VXA-120P-50

Keywords - AOD8B65MQ1 transistor datasheet

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