AOGF40B65H2AL PDF and Equivalents Search

 

AOGF40B65H2AL Specs and Replacement

Type Designator: AOGF40B65H2AL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 69 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 115 pF

Package: TO3PF

 AOGF40B65H2AL Substitution

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AOGF40B65H2AL datasheet

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 aogf40b65h2al.pdf pdf_icon

AOGF40B65H2AL

AOGF40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed L... See More ⇒

Specs: AOD5B65M1E, AOD5B65M1H, AOD5B65MQ1E, AOD5B65N1, AOD6B60M1, AOD6B65MQ1E, AOD7B65M3, AOD8B65MQ1, RJP63F3DPP-M0, AOGF60B65H2AL, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1, AOK20B135E1, AOK20B65M1, AOK20B65M2

Keywords - AOGF40B65H2AL transistor spec

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