AOGF60B65H2AL PDF and Equivalents Search

 

AOGF60B65H2AL Specs and Replacement

Type Designator: AOGF60B65H2AL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 74 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 185 pF

Package: TO3PF

 AOGF60B65H2AL Substitution

- IGBT ⓘ Cross-Reference Search

 

AOGF60B65H2AL datasheet

 ..1. Size:620K  aosemi
 aogf60b65h2al.pdf pdf_icon

AOGF60B65H2AL

AOGF60B65H2AL TM 650V, 60A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 650V Latest AlphaIGBT ( IGBT) Technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Very high switching speed L... See More ⇒

Specs: AOD5B65M1H, AOD5B65MQ1E, AOD5B65N1, AOD6B60M1, AOD6B65MQ1E, AOD7B65M3, AOD8B65MQ1, AOGF40B65H2AL, FGH60N60SFD, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1, AOK20B135E1, AOK20B65M1, AOK20B65M2, AOK30B120D2

Keywords - AOGF60B65H2AL transistor spec

 AOGF60B65H2AL cross reference
 AOGF60B65H2AL equivalent finder
 AOGF60B65H2AL lookup
 AOGF60B65H2AL substitution
 AOGF60B65H2AL replacement

 

 

 

 

↑ Back to Top
.