All IGBT. AOGF60B65H2AL Datasheet

 

AOGF60B65H2AL Datasheet and Replacement


   Type Designator: AOGF60B65H2AL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 74 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 185 pF
   Qg ⓘ - Total Gate Charge, typ: 84 nC
   Package: TO3PF
 

 AOGF60B65H2AL substitution

   - IGBT ⓘ Cross-Reference Search

 

AOGF60B65H2AL Datasheet (PDF)

 ..1. Size:620K  aosemi
 aogf60b65h2al.pdf pdf_icon

AOGF60B65H2AL

AOGF60B65H2ALTM 650V, 60A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE650V Latest AlphaIGBT (IGBT) Technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Very high switching speed L

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - AOGF60B65H2AL transistor datasheet

 AOGF60B65H2AL cross reference
 AOGF60B65H2AL equivalent finder
 AOGF60B65H2AL lookup
 AOGF60B65H2AL substitution
 AOGF60B65H2AL replacement

 

 
Back to Top

 


 
.