All IGBT. AOGF60B65H2AL Datasheet

 

AOGF60B65H2AL Datasheet and Replacement


   Type Designator: AOGF60B65H2AL
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 74 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 185 pF
   Package: TO3PF
 

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AOGF60B65H2AL Datasheet (PDF)

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AOGF60B65H2AL

AOGF60B65H2ALTM 650V, 60A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE650V Latest AlphaIGBT (IGBT) Technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Very high switching speed L

Datasheet: AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , IKW75N60T , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 .

History: IKD15N60RC2 | HGT1S5N120BNS | FD1000R17IE4 | VS-GB50NA120UX

Keywords - AOGF60B65H2AL transistor datasheet

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