All IGBT. AOKS30B60D1 Datasheet

 

AOKS30B60D1 Datasheet and Replacement


   Type Designator: AOKS30B60D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO247
      - IGBT Cross-Reference

 

AOKS30B60D1 Datasheet (PDF)

 ..1. Size:731K  aosemi
 aoks30b60d1.pdf pdf_icon

AOKS30B60D1

AOKS30B60D1TM600V, 30A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 30A Very high switching speed VCE(sat) (TC=25C) 2.0V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Welding Machine

Datasheet: AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , RJH60F5DPQ-A0 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D .

History: NCE40TD60BT | IXST35N120B | MSG20T120FQC | MSG100D350FHS | SII100N12 | MSG20T65HPT1 | MSG40T120FQC

Keywords - AOKS30B60D1 transistor datasheet

 AOKS30B60D1 cross reference
 AOKS30B60D1 equivalent finder
 AOKS30B60D1 lookup
 AOKS30B60D1 substitution
 AOKS30B60D1 replacement

 

 
Back to Top

 


 
.