AOKS30B60D1 Specs and Replacement
Type Designator: AOKS30B60D1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO247
AOKS30B60D1 Substitution - IGBT ⓘ Cross-Reference Search
AOKS30B60D1 datasheet
aoks30b60d1.pdf
AOKS30B60D1 TM 600V, 30A Alpha IGBT General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100 C) 30A Very high switching speed VCE(sat) (TC=25 C) 2.0V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggedness Applications Welding Machine... See More ⇒
Specs: AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , GT30F131 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D .
History: MPBC15N65EF
Keywords - AOKS30B60D1 transistor spec
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History: MPBC15N65EF
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