All IGBT. AOKS30B60D1 Datasheet

 

AOKS30B60D1 Datasheet and Replacement


   Type Designator: AOKS30B60D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qg ⓘ - Total Gate Charge, typ: 34 nC
   Package: TO247
 

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AOKS30B60D1 Datasheet (PDF)

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AOKS30B60D1

AOKS30B60D1TM600V, 30A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 30A Very high switching speed VCE(sat) (TC=25C) 2.0V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Welding Machine

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: TGAN40N60F2D | OST50N65HF | MG200Q2YS65H | SPT15N120F1 | SII100N12 | STGWA60H65DFB | TGAN40N120F2DW

Keywords - AOKS30B60D1 transistor datasheet

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