All IGBT. AOKS30B60D1 Datasheet

 

AOKS30B60D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: AOKS30B60D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 34 nC
   Package: TO247

 AOKS30B60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOKS30B60D1 Datasheet (PDF)

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 aoks30b60d1.pdf

AOKS30B60D1 AOKS30B60D1

AOKS30B60D1TM600V, 30A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 30A Very high switching speed VCE(sat) (TC=25C) 2.0V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Welding Machine

Datasheet: AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , RJH3047 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D .

 

 
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