All IGBT. AOT8B65M3 Datasheet

 

AOT8B65M3 Datasheet and Replacement


   Type Designator: AOT8B65M3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Package: TO220
 

 AOT8B65M3 substitution

   - IGBT ⓘ Cross-Reference Search

 

AOT8B65M3 Datasheet (PDF)

 ..1. Size:584K  aosemi
 aot8b65m3.pdf pdf_icon

AOT8B65M3

AOT8B65M3TM 650V,8A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG600KR120U

Keywords - AOT8B65M3 transistor datasheet

 AOT8B65M3 cross reference
 AOT8B65M3 equivalent finder
 AOT8B65M3 lookup
 AOT8B65M3 substitution
 AOT8B65M3 replacement

 

 
Back to Top

 


 
.