All IGBT. AOT8B65M3 Datasheet

 

AOT8B65M3 Datasheet and Replacement


   Type Designator: AOT8B65M3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.1 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qgⓘ - Total Gate Charge, typ: 14 nC
   Package: TO220
      - IGBT Cross-Reference

 

AOT8B65M3 Datasheet (PDF)

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AOT8B65M3

AOT8B65M3TM 650V,8A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

Datasheet: BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , SGT50T65FD1PT , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F .

Keywords - AOT8B65M3 transistor datasheet

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