AOTS40B65H1 Specs and Replacement

Type Designator: AOTS40B65H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 129 pF

Package: TO220

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AOTS40B65H1 datasheet

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AOTS40B65H1

AOKS40B65H1/AOTS40B65H1 TM 650V, 40A Alpha IGBT General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25 C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged... See More ⇒

Specs: AOTF15B65M3, AOTF15B65MQ1, AOTF20B65LN2, AOTF20B65M1, AOTF20B65M2, AOTF5B65M1, AOTF5B65M2, AOTF8B65MQ1, XNF15N60T, G50T65D, DGC20F65M2, DGC40F120M2, DGC40F65M2, DGC40H120M2, DGC50F65M2, DGC60F65M, DGC75F120M2

Keywords - AOTS40B65H1 transistor spec

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