AOTS40B65H1 Specs and Replacement
Type Designator: AOTS40B65H1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 129 pF
Package: TO220
AOTS40B65H1 Substitution - IGBT ⓘ Cross-Reference Search
AOTS40B65H1 datasheet
aots40b65h1.pdf
AOKS40B65H1/AOTS40B65H1 TM 650V, 40A Alpha IGBT General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25 C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged... See More ⇒
Specs: AOTF15B65M3 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , XNF15N60T , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 .
History: MKI100-12E8
Keywords - AOTS40B65H1 transistor spec
AOTS40B65H1 cross reference
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History: MKI100-12E8
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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