All IGBT. AOTS40B65H1 Datasheet

 

AOTS40B65H1 IGBT. Datasheet pdf. Equivalent


   Type Designator: AOTS40B65H1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.9 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 129 pF
   Qgⓘ - Total Gate Charge, typ: 63 nC
   Package: TO220

 AOTS40B65H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOTS40B65H1 Datasheet (PDF)

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 aots40b65h1.pdf

AOTS40B65H1 AOTS40B65H1

AOKS40B65H1/AOTS40B65H1TM650V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged

Datasheet: AOTF15B65M3 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , IRG4PH50UD , , , , , , , , .

 

 
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