DGD06F65M2 Specs and Replacement
Type Designator: DGD06F65M2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 69 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.73 V @25℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Package: TO252
DGD06F65M2 Substitution - IGBT ⓘ Cross-Reference Search
DGD06F65M2 datasheet
dgd06f65m2.pdf
DGD06F65M2 6A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.73V @ I =6A ... See More ⇒
Specs: DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , GT30F132 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D .
Keywords - DGD06F65M2 transistor spec
DGD06F65M2 cross reference
DGD06F65M2 equivalent finder
DGD06F65M2 lookup
DGD06F65M2 substitution
DGD06F65M2 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sa720 | 2sc1345 | 2sd555 | a950 transistor | k2611 | c1740 transistor | c828 transistor | c4467