DGF30F65M2 Datasheet and Replacement
Type Designator: DGF30F65M2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 39 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Qgⓘ - Total Gate Charge, typ: 48 nC
Package: TO220F
- IGBT Cross-Reference
DGF30F65M2 Datasheet (PDF)
dgf30f65m2.pdf
DGF30F65M230A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.9V@ I =30A
Datasheet: DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , IRGP4063 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , , , .
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LIST
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M