All IGBT. 2SH31 Datasheet

 

2SH31 Datasheet and Replacement


   Type Designator: 2SH31
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: TO3P
      - IGBT Cross-Reference

 

2SH31 Datasheet (PDF)

 ..1. Size:48K  hitachi
 2sh31.pdf pdf_icon

2SH31

2SH31Silicon N Channel IGBTHigh Speed Power SwitchingADE-208-793(Z)1st. EditionMay 1999Features High speed switching Low on-voltageOutlineTO3PCG1. GateE12. Collector (Flange)23. Emitter32SH31Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to Emitter voltage VCES 600 VGate to Emitter voltage VGES 20 VCollector

Datasheet: 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 , 2SH30 , GT30J122 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - 2SH31 transistor datasheet

 2SH31 cross reference
 2SH31 equivalent finder
 2SH31 lookup
 2SH31 substitution
 2SH31 replacement

 

 
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