2SH31 Specs and Replacement
Type Designator: 2SH31
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO3P
2SH31 Substitution - IGBTⓘ Cross-Reference Search
2SH31 datasheet
2sh31.pdf
2SH31 Silicon N Channel IGBT High Speed Power Switching ADE-208-793(Z) 1st. Edition May 1999 Features High speed switching Low on-voltage Outline TO 3P C G 1. Gate E 1 2. Collector (Flange) 2 3. Emitter 3 2SH31 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 600 V Gate to Emitter voltage VGES 20 V Collector... See More ⇒
Specs: 2SH20, 2SH21, 2SH22, 2SH26, 2SH27, 2SH28, 2SH29, 2SH30, FGH30S130P, HCKZ75N65BH2, IGC07T120T8L, IGC07T120T6L, APT100GF60LR, APT11GF120BRD, IGC07R60DE, IGC07R60D, IGC06R60DE
Keywords - 2SH31 transistor spec
2SH31 cross reference
2SH31 equivalent finder
2SH31 lookup
2SH31 substitution
2SH31 replacement
History: 2SH26 | 2SH27 | 2SH22
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
2n3565 | irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381 | bc546 | 2sc458