DHG20T65D Specs and Replacement
Type Designator: DHG20T65D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 26 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 36 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO220F
DHG20T65D Substitution - IGBT ⓘ Cross-Reference Search
DHG20T65D datasheet
dhg20t65d.pdf
DHG20T65D Insulated Gate Bipolar Transistor General Description V 650 V CES Using DongHai's proprietary Trench design and advanced FS I 18 A C technology, the 650V FS IGBT offers superior conduction and switching P T =25 26 W tot C performances, high avalanche ruggedness and easy parallel operation. V 1.8 V CE(SAT) Features FS Trench Technology, Positive temperatu... See More ⇒
Specs: DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , FGH40N60SFD , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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