All IGBT. DHG20T65D Datasheet

 

DHG20T65D Datasheet and Replacement


   Type Designator: DHG20T65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 26 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qg ⓘ - Total Gate Charge, typ: 59 nC
   Package: TO220F
 
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DHG20T65D Datasheet (PDF)

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DHG20T65D

DHG20T65DInsulated Gate Bipolar TransistorGeneral DescriptionV 650 VCESUsing DongHai's proprietary Trench design and advanced FSI 18 ACtechnology, the 650V FS IGBT offers superior conduction and switchingP T =25 26 Wtot Cperformances, high avalanche ruggedness and easy parallel operation.V 1.8 VCE(SAT)Features FS Trench Technology, Positive temperatu

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