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DHG20T65D Spec and Replacement


   Type Designator: DHG20T65D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 26 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO220F

 DHG20T65D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DHG20T65D specs

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DHG20T65D

DHG20T65D Insulated Gate Bipolar Transistor General Description V 650 V CES Using DongHai's proprietary Trench design and advanced FS I 18 A C technology, the 650V FS IGBT offers superior conduction and switching P T =25 26 W tot C performances, high avalanche ruggedness and easy parallel operation. V 1.8 V CE(SAT) Features FS Trench Technology, Positive temperatu... See More ⇒

Specs: DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , FGH40N60SFD , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE .

History: G50T65LBBW

Keywords - DHG20T65D transistor spec

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