DHG20T65D Datasheet and Replacement
Type Designator: DHG20T65D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 26 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 36 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Qg ⓘ - Total Gate Charge, typ: 59 nC
Package: TO220F
DHG20T65D substitution
DHG20T65D Datasheet (PDF)
dhg20t65d.pdf
DHG20T65DInsulated Gate Bipolar TransistorGeneral DescriptionV 650 VCESUsing DongHai's proprietary Trench design and advanced FSI 18 ACtechnology, the 650V FS IGBT offers superior conduction and switchingP T =25 26 Wtot Cperformances, high avalanche ruggedness and easy parallel operation.V 1.8 VCE(SAT)Features FS Trench Technology, Positive temperatu
Datasheet: DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , GT50JR22 , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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