JJT120N75SA Datasheet and Replacement
Type Designator: JJT120N75SA
Type: IGBT + Anti-Parallel Diode
Marking Code: T12075SA
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 394 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 141 nS
Coesⓘ - Output Capacitance, typ: 390 pF
Qg ⓘ - Total Gate Charge, typ: 382 nC
Package: TO247PLUS
JJT120N75SA substitution
JJT120N75SA Datasheet (PDF)
jjt120n75sa.pdf
750V 120A Trench and Field Stop IGBTJJT120N75SAKey performance:TO-247PLUS V =750VCE I =120A@T =100C C V =1.4VCE(sat)Features:G Trench and field-stop technology.CE Easy parallel switching capability.Benefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninte
Datasheet: G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , GT30J127 , JJT50N65HE , JJT50N65LE , JJT50N65UE , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS .
History: JJT50N65HE
Keywords - JJT120N75SA transistor datasheet
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History: JJT50N65HE
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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