JJT25N120SE Datasheet. Specs and Replacement

Type Designator: JJT25N120SE  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 62 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO247

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JJT25N120SE datasheet

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JJT25N120SE

1200V 25A Trench and Field Stop IGBT JJT25N120SE Key performance V =1200V CE TO-247 I =25A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro... See More ⇒

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JJT25N120SE

1350V 25A Trench and Field Stop IGBT JJT25N135UE Key performance V =1350V CE TO-247 I =25A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R... See More ⇒

Specs: JJT6N65STD, JJT75N120SA, JJT75N65HCN, JJT75N65HE, JJT20N65SC, JJT20N65SE, JJT20N65SS, JJT20N65SY, IHW20N120R3, JJT25N135UE, JJT60N65HE, JJT60N65UE, JJT60N65UH, JJT40N120UE, JJT40N135UE, JJT40N65HE, JJT40N65LE

Keywords - JJT25N120SE transistor spec

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