JJT25N120SE Specs and Replacement
Type Designator: JJT25N120SE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Package: TO247
JJT25N120SE Substitution - IGBT ⓘ Cross-Reference Search
JJT25N120SE datasheet
jjt25n120se.pdf
1200V 25A Trench and Field Stop IGBT JJT25N120SE Key performance V =1200V CE TO-247 I =25A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro... See More ⇒
jjt25n135ue.pdf
1350V 25A Trench and Field Stop IGBT JJT25N135UE Key performance V =1350V CE TO-247 I =25A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R... See More ⇒
Specs: JJT6N65STD , JJT75N120SA , JJT75N65HCN , JJT75N65HE , JJT20N65SC , JJT20N65SE , JJT20N65SS , JJT20N65SY , IRGP4063D , JJT25N135UE , JJT60N65HE , JJT60N65UE , JJT60N65UH , JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE .
Keywords - JJT25N120SE transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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