All IGBT. IXSM30N60A Datasheet

 

IXSM30N60A Datasheet and Replacement


   Type Designator: IXSM30N60A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qg ⓘ - Total Gate Charge, typ: 110 nC
   Package: TO204
 

 IXSM30N60A substitution

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IXSM30N60A Datasheet (PDF)

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IXSM30N60A

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 ixsm35n100a.pdf pdf_icon

IXSM30N60A

High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A

Datasheet: IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , GT30J122 , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 .

History: STGW75M65DF2

Keywords - IXSM30N60A transistor datasheet

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 IXSM30N60A equivalent finder
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