All IGBT. IXSN62N60U1 Datasheet

 

IXSN62N60U1 Datasheet and Replacement


   Type Designator: IXSN62N60U1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 220 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Qg ⓘ - Total Gate Charge, typ: 190 nC
   Package: SOT227B
 

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IXSN62N60U1 Datasheet (PDF)

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IXSN62N60U1

IGBT with Diode IXSN 62N60U1 VCES = 600 VIC25 = 90 AVCE(sat) = 2.5 VShort Circuit SOA Capability3241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B12VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 V4VGEM Transient 30 V3IC25 TC = 25C90 A1 = Emitter , 3 = CollectorIC90 TC = 90C50 A2 = Gate, 4

Datasheet: IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IKW40N65WR5 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 .

Keywords - IXSN62N60U1 transistor datasheet

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