All IGBT. IXSM45N100 Datasheet

 

IXSM45N100 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSM45N100
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 165 nC
   Package: TO3

 IXSM45N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSM45N100 Datasheet (PDF)

 ..1. Size:102K  ixys
 ixsm45n100.pdf

IXSM45N100 IXSM45N100

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A

 9.1. Size:277K  ixys
 ixsh40n60 ixsh40n60a ixsm40n60 ixsm40n60a.pdf

IXSM45N100 IXSM45N100

Datasheet: IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , GT30F132 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A .

 

 
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