IXSM45N100 Datasheet and Replacement
Type Designator: IXSM45N100
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO3
- IGBT Cross-Reference
IXSM45N100 Datasheet (PDF)
ixsm45n100.pdf
Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A
Datasheet: IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , RJH60F7BDPQ-A0 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A .
History: HGTD3N60C3 | SGF5N150UF | NGTB20N120IHWG | MMG75W120X6TN | APT35GN120BG | NGTB20N120IH | KGT25N120KDA
Keywords - IXSM45N100 transistor datasheet
IXSM45N100 cross reference
IXSM45N100 equivalent finder
IXSM45N100 lookup
IXSM45N100 substitution
IXSM45N100 replacement
History: HGTD3N60C3 | SGF5N150UF | NGTB20N120IHWG | MMG75W120X6TN | APT35GN120BG | NGTB20N120IH | KGT25N120KDA
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