IXSM45N100 PDF and Equivalents Search

 

IXSM45N100 Specs and Replacement

Type Designator: IXSM45N100

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: TO3

 IXSM45N100 Substitution

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IXSM45N100 datasheet

 ..1. Size:102K  ixys
 ixsm45n100.pdf pdf_icon

IXSM45N100

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 V IXSM 45N100 IC25 = 75 A VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC90 TC = 90 C45 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 180 A ... See More ⇒

 9.1. Size:277K  ixys
 ixsh40n60 ixsh40n60a ixsm40n60 ixsm40n60a.pdf pdf_icon

IXSM45N100

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Specs: IXSP16N60, IXST15N120B, IXST30N60B, IXST30N60BD1, IXST30N60C, IXST30N60CD1, IXST40N60B, IXSM40N60A, IRGB20B60PD1, IXSX35N120AU1, IXSX40N60CD1, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, KP730A, KP731A

Keywords - IXSM45N100 transistor spec

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