KP810B Datasheet and Replacement
Type Designator: KP810B
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1300 V
|Ic|ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 200 nS
Package: TO218
- IGBT Cross-Reference
KP810B Datasheet (PDF)
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Datasheet: IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , KP810A , GT30J124 , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 .
History: MMG300D120B6TC
Keywords - KP810B transistor datasheet
KP810B cross reference
KP810B equivalent finder
KP810B lookup
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KP810B replacement
History: MMG300D120B6TC
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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