KP810B Specs and Replacement
Type Designator: KP810B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1300 V
|Ic| ⓘ - Maximum Collector Current: 7 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Package: TO218
KP810B Substitution - IGBT ⓘ Cross-Reference Search
KP810B datasheet
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Specs: IXSX40N60CD1, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, KP730A, KP731A, KP810A, MBQ60T65PES, KP810V, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4, MDI300-12A4, MDI550-12A4, MDI75-12A3
Keywords - KP810B transistor spec
KP810B cross reference
KP810B equivalent finder
KP810B lookup
KP810B substitution
KP810B replacement
History: MG50Q1BS11
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