All IGBT. MDI100-12A3 Datasheet

 

MDI100-12A3 Datasheet and Replacement


   Type Designator: MDI100-12A3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Qg ⓘ - Total Gate Charge, typ: 350 nC
   Package: INT-A-PAK
 

 MDI100-12A3 substitution

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MDI100-12A3 Datasheet (PDF)

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MDI100-12A3

MDI100-12A3VCES = 1200VIGBT (NPT) ModuleI= 135AC25VCE(sat) = 2.2VBuck Chopper + free wheeling DiodePart numberMDI100-12A3Backside: isolated17632Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~3600 low saturation voltage Solar inverter Industry standard outline low switching l

Datasheet: IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , KP810A , KP810B , KP810V , FGH40N60SFD , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL .

Keywords - MDI100-12A3 transistor datasheet

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