MDI550-12A4 Datasheet and Replacement
Type Designator: MDI550-12A4
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 2750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: INT-A-PAK
MDI550-12A4 substitution
MDI550-12A4 Datasheet (PDF)
mdi550-12a4.pdf
MID 550-12 A4MDI 550-12 A4IGBT Modules IC25 = 670 AVCES = 1200 VShort Circuit SOA CapabilityVCE(sat) typ. = 2.3 VSquare RBSOA3MID MDI2113 31109881 19112 210E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR TJ = 25C to 150C; RGE = 20 kW 120
Datasheet: KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , GT30J127 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL .
History: IXYH75N65C3
Keywords - MDI550-12A4 transistor datasheet
MDI550-12A4 cross reference
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MDI550-12A4 lookup
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MDI550-12A4 replacement
History: IXYH75N65C3
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