MDI550-12A4 Datasheet and Replacement
Type Designator: MDI550-12A4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: INT-A-PAK
- IGBT Cross-Reference
MDI550-12A4 Datasheet (PDF)
mdi550-12a4.pdf

MID 550-12 A4MDI 550-12 A4IGBT Modules IC25 = 670 AVCES = 1200 VShort Circuit SOA CapabilityVCE(sat) typ. = 2.3 VSquare RBSOA3MID MDI2113 31109881 19112 210E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR TJ = 25C to 150C; RGE = 20 kW 120
Datasheet: KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , SGT50T65FD1PT , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL .
History: SII200N06 | APTGF50DH60T | RJP60V0DPM | GT10G101 | MG300N1US1 | VS-150MT060WDF | STGP10NC60HD
Keywords - MDI550-12A4 transistor datasheet
MDI550-12A4 cross reference
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MDI550-12A4 replacement
History: SII200N06 | APTGF50DH60T | RJP60V0DPM | GT10G101 | MG300N1US1 | VS-150MT060WDF | STGP10NC60HD



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