MDI550-12A4 Specs and Replacement
Type Designator: MDI550-12A4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 500 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: INT-A-PAK MDI550-12A4 Substitution - IGBT ⓘ Cross-Reference Search
MDI550-12A4 datasheet
mdi550-12a4.pdf
MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V Short Circuit SOA Capability VCE(sat) typ. = 2.3 V Square RBSOA 3 MID MDI 2 11 3 3 1 10 9 8 8 1 1 9 11 2 2 10 E 72873 Features Symbol Conditions Maximum Ratings NPT IGBT technology low saturation voltage VCES TJ = 25 C to 150 C 1200 V low switching losses VCGR TJ = 25 C to 150 C; RGE = 20 kW 120... See More ⇒
Specs: KP810A, KP810B, KP810V, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4, MDI300-12A4, IXGH60N60, MDI75-12A3, MGB15N35CLT4, MGB15N40CL, MGP11N60E, MGP11N60ED, MGP14N60E, MGP15N35CL, MGP15N38CL
Keywords - MDI550-12A4 transistor spec
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History: IGC11T120T6L | MDI200-12A4 | APT33GF120LRD | MG50J2YS50 | MDI150-12A4 | IGC189T120T8RL
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