All IGBT. MGP14N60E Datasheet

 

MGP14N60E Datasheet and Replacement


   Type Designator: MGP14N60E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 104 pF
   Package: TO220
      - IGBT Cross-Reference

 

MGP14N60E Datasheet (PDF)

 0.1. Size:125K  motorola
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MGP14N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP14N60E/DDesigner's Data SheetMGP14N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high14 A @ 90Cvoltageblocking capability. Its new 600 V I

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History: GT5G102LB | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | IGB30N60T

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