All IGBT. MGP14N60E Datasheet

 

MGP14N60E Datasheet and Replacement


   Type Designator: MGP14N60E
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 104 pF
   Qg ⓘ - Total Gate Charge, typ: 57 nC
   Package: TO220
 

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MGP14N60E Datasheet (PDF)

 0.1. Size:125K  motorola
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MGP14N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP14N60E/DDesigner's Data SheetMGP14N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high14 A @ 90Cvoltageblocking capability. Its new 600 V I

Datasheet: MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , RJP30H1DPD , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL .

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