MGP14N60E PDF and Equivalents Search

 

MGP14N60E Specs and Replacement

Type Designator: MGP14N60E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 110 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 18 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 104 pF

Package: TO220

 MGP14N60E Substitution

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MGP14N60E datasheet

 0.1. Size:125K  motorola
 mgp14n60erev0.pdf pdf_icon

MGP14N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP14N60E/D Designer's Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 14 A @ 90 C voltage blocking capability. Its new 600 V I... See More ⇒

Specs: MDI200-12A4, MDI300-12A4, MDI550-12A4, MDI75-12A3, MGB15N35CLT4, MGB15N40CL, MGP11N60E, MGP11N60ED, SGT40N60NPFDPN, MGP15N35CL, MGP15N38CL, MGP15N40CL, MGP15N43CL, MGP15N60U, MGP20N14CL, MGP20N35CL, MGP20N40CL

Keywords - MGP14N60E transistor spec

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