MGS05N60D PDF and Equivalents Search

 

MGS05N60D Specs and Replacement

Type Designator: MGS05N60D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 0.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

Coesⓘ - Output Capacitance, typ: 11 pF

Package: TO92L

 MGS05N60D Substitution

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MGS05N60D datasheet

 0.1. Size:135K  motorola
 mgs05n60drev0.pdf pdf_icon

MGS05N60D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS05N60D/D Designer's Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT Built In Free... See More ⇒

Specs: MGP20N35CL, MGP20N40CL, MGP20N60U, MGP21N60E, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, IRGP4063D, MGS13002D, MGV12N120D, MGW12N120, MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED

Keywords - MGS05N60D transistor spec

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