MGS05N60D Datasheet and Replacement

   Type Designator: MGS05N60D
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 0.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 11 pF
   Qgⓘ - Total Gate Charge, typ: 6.4 nC
   Package: TO92L
      - IGBT Cross-Reference