All IGBT. MGS05N60D Datasheet

 

MGS05N60D IGBT. Datasheet pdf. Equivalent


   Type Designator: MGS05N60D
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 0.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 11 pF
   Qgⓘ - Total Gate Charge, typ: 6.4 nC
   Package: TO92L

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MGS05N60D Datasheet (PDF)

 0.1. Size:135K  motorola
 mgs05n60drev0.pdf

MGS05N60D MGS05N60D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGS05N60D/DDesigner's Data SheetMGS05N60DInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis IGBT contains a builtin free wheeling diode and a gateprotection zener. Fast switching characteristics result in efficientPOWERLUXoperation at higher frequencies.IGBT BuiltIn Free

Datasheet: MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , FGA60N65SMD , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED .

 

 
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