MGW14N60ED Datasheet. Specs and Replacement

Type Designator: MGW14N60ED  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 112 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 18 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 104 pF

Package: TO247

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MGW14N60ED datasheet

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MGW14N60ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW14N60ED/D Designer's Data Sheet MGW14N60ED Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged IGBT IN TO 247 with a soft recovery ultra fast rectifier and uses an advanced 14 A @ 90 C termination scheme to provide an enhanc... See More ⇒

Specs: MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, MGS13002D, MGV12N120D, MGW12N120, MGW12N120D, CRG40T65AK5HD, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60, MGY20N120D, MGY25N120, MGY25N120D, MID100-12A3

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