All IGBT. MGW14N60ED Datasheet

 

MGW14N60ED IGBT. Datasheet pdf. Equivalent


   Type Designator: MGW14N60ED
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 112 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 104 pF
   Qgⓘ - Total Gate Charge, typ: 57 nC
   Package: TO247

 MGW14N60ED Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MGW14N60ED Datasheet (PDF)

 ..1. Size:154K  motorola
 mgw14n60ed.pdf

MGW14N60ED MGW14N60ED

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW14N60ED/DDesigner's Data SheetMGW14N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced14 A @ 90Ctermination scheme to provide an enhanc

Datasheet: MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , CRG40T60AK3HD , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 .

 

 
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