MGW14N60ED Datasheet and Replacement
Type Designator: MGW14N60ED
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 112 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 104 pF
Qg ⓘ - Total Gate Charge, typ: 57 nC
Package: TO247
MGW14N60ED substitution
MGW14N60ED Datasheet (PDF)
mgw14n60ed.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW14N60ED/DDesigner's Data SheetMGW14N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced14 A @ 90Ctermination scheme to provide an enhanc
Datasheet: MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , GT45F122 , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 .
History: MGS13002D
Keywords - MGW14N60ED transistor datasheet
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History: MGS13002D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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