MGW14N60ED PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGW14N60ED PDF Specs and Replacement

   Type Designator: MGW14N60ED
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 112 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 104 pF
   Package: TO247

MGW14N60ED Substitution

- IGBT ⓘ Cross-Reference Search

MGW14N60ED PDF specs

..1. Size:154K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW14N60ED/D Designer's Data Sheet MGW14N60ED Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged IGBT IN TO 247 with a soft recovery ultra fast rectifier and uses an advanced 14 A @ 90 C termination scheme to provide an enhanc... See More ⇒

Specs: MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , RJH3047 , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 .