All IGBT. MID100-12A3 Datasheet

 

MID100-12A3 IGBT. Datasheet pdf. Equivalent


   Type Designator: MID100-12A3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 560 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 135 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 350 nC
   Package: MODULE

 MID100-12A3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MID100-12A3 Datasheet (PDF)

 ..1. Size:190K  ixys
 mid100-12a3.pdf

MID100-12A3 MID100-12A3

MID100-12A3VCES = 1200VIGBT (NPT) ModuleI= 135AC25VCE(sat) = 2.2VBoost Chopper + free wheeling DiodePart numberMID100-12A3Backside: isolated13452Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~3600 low saturation voltage Solar inverter Industry standard outline low switching

Datasheet: MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , CRG15T120BNR3S , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A .

 

 
Back to Top