MID100-12A3 Specs and Replacement
Type Designator: MID100-12A3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 560 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 135 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE MID100-12A3 Substitution - IGBT ⓘ Cross-Reference Search
MID100-12A3 datasheet
mid100-12a3.pdf
MID100-12A3 VCES = 1200V IGBT (NPT) Module I= 135A C25 VCE(sat) = 2.2V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside isolated 1 3 4 5 2 Features / Advantages Applications Package Y4 NPT IGBT technology AC motor drives Isolation Voltage V 3600 low saturation voltage Solar inverter Industry standard outline low switching ... See More ⇒
Specs: MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , FGPF4633 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A .
History: MID200-12A4
Keywords - MID100-12A3 transistor spec
MID100-12A3 cross reference
MID100-12A3 equivalent finder
MID100-12A3 lookup
MID100-12A3 substitution
MID100-12A3 replacement
History: MID200-12A4
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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