MID100-12A3 PDF and Equivalents Search

 

MID100-12A3 Specs and Replacement

Type Designator: MID100-12A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 560 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 135 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

 MID100-12A3 Substitution

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MID100-12A3 datasheet

 ..1. Size:190K  ixys
mid100-12a3.pdf pdf_icon

MID100-12A3

MID100-12A3 VCES = 1200V IGBT (NPT) Module I= 135A C25 VCE(sat) = 2.2V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside isolated 1 3 4 5 2 Features / Advantages Applications Package Y4 NPT IGBT technology AC motor drives Isolation Voltage V 3600 low saturation voltage Solar inverter Industry standard outline low switching ... See More ⇒

Specs: MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , FGPF4633 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A .

History: MID200-12A4

Keywords - MID100-12A3 transistor spec

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