MID200-12A4 PDF and Equivalents Search

 

MID200-12A4 Specs and Replacement

Type Designator: MID200-12A4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

Package: MODULE

 MID200-12A4 Substitution

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MID200-12A4 datasheet

 ..1. Size:113K  ixys
 mid200-12a4.pdf pdf_icon

MID200-12A4

MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A IGBT Modules VCES = 1200 V VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA 3 MII MID MDI 2 11 3 3 3 1 10 9 8 8 8 1 1 1 9 9 11 11 2 2 2 10 10 E 72873 Features Symbol Conditions Maximum Ratings NPT IGBT technology low saturation voltage VCES TJ = 25 C to 150 C 1200 V low switching losses VCGR ... See More ⇒

Specs: MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , GT45F122 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B .

Keywords - MID200-12A4 transistor spec

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