All IGBT. MID200-12A4 Datasheet

 

MID200-12A4 IGBT. Datasheet pdf. Equivalent


   Type Designator: MID200-12A4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: MODULE

 MID200-12A4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MID200-12A4 Datasheet (PDF)

 ..1. Size:113K  ixys
 mid200-12a4.pdf

MID200-12A4 MID200-12A4

MII 200-12 A4 MID 200-12 A4MDI 200-12 A4IC25 = 270 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MIIMID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR

Datasheet: MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , CRG60T60AK3HD , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B .

 

 
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