All IGBT. MID200-12A4 Datasheet

 

MID200-12A4 Datasheet and Replacement


   Type Designator: MID200-12A4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: MODULE
      - IGBT Cross-Reference

 

MID200-12A4 Datasheet (PDF)

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MID200-12A4

MII 200-12 A4 MID 200-12 A4MDI 200-12 A4IC25 = 270 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MIIMID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR

Datasheet: MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , GT30F131 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - MID200-12A4 transistor datasheet

 MID200-12A4 cross reference
 MID200-12A4 equivalent finder
 MID200-12A4 lookup
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