MID550-12A4 IGBT. Datasheet pdf. Equivalent
Type Designator: MID550-12A4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
MID550-12A4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MID550-12A4 Datasheet (PDF)
mid550-12a4.pdf
MID 550-12 A4MDI 550-12 A4IGBT Modules IC25 = 670 AVCES = 1200 VShort Circuit SOA CapabilityVCE(sat) typ. = 2.3 VSquare RBSOA3MID MDI2113 31109881 19112 210E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR TJ = 25C to 150C; RGE = 20 kW 120
Datasheet: MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , RJH60F5DPQ-A0 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2