MMG05N60D PDF and Equivalents Search

 

MMG05N60D Specs and Replacement

Type Designator: MMG05N60D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

Package: SOT223

 MMG05N60D Substitution

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MMG05N60D datasheet

 0.1. Size:135K  motorola
 mmg05n60drev0.pdf pdf_icon

MMG05N60D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMG05N60D/D Designer's Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT Built In Free... See More ⇒

Specs: MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , SGP30N60 , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B .

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