MMG05N60D Datasheet and Replacement
Type Designator: MMG05N60D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: SOT223
MMG05N60D substitution
MMG05N60D Datasheet (PDF)
mmg05n60drev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMG05N60D/DDesigner's Data SheetMMG05N60DInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis IGBT contains a builtin free wheeling diode and a gateprotection zener. Fast switching characteristics result in efficientPOWERLUXoperation at higher frequencies.IGBT BuiltIn Free
Datasheet: MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , IRGP4066D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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