All IGBT. MSAGZ52F120B Datasheet

 

MSAGZ52F120B IGBT. Datasheet pdf. Equivalent


   Type Designator: MSAGZ52F120B
   Type: IGBT
   Type of IGBT Channel: P
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 95 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Package: SMD-P

 MSAGZ52F120B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSAGZ52F120B Datasheet (PDF)

 3.1. Size:35K  microsemi
 msagz52f120a.pdf

MSAGZ52F120B MSAGZ52F120B

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

Datasheet: MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , TGPF30N43P , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 .

 

 
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