MSAGZ52F120B Specs and Replacement
Type Designator: MSAGZ52F120B
Type: IGBT
Type of IGBT Channel: P
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 52 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
tr ⓘ - Rise Time, typ: 95 nS
Coesⓘ - Output Capacitance, typ: 2200pF pF
Package: SMD-P MSAGZ52F120B Substitution - IGBT ⓘ Cross-Reference Search
MSAGZ52F120B datasheet
msagz52f120a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava... See More ⇒
Specs: MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , CRG75T60AK3HD , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 .
Keywords - MSAGZ52F120B transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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