MSAHX75L60D Datasheet and Replacement
Type Designator: MSAHX75L60D
Type: IGBT
Type of IGBT Channel: P
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 4000pF pF
Package: SMD-P
MSAHX75L60D substitution
MSAHX75L60D Datasheet (PDF)
msahx75l60c.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAHX75L60CFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque
msahx60f60a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGX60F60AFAX: (714) 966-5256MSAHX60F60AFeatures600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof60 Amps Hermetically sealed, surface mount power package Low package inductance2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa
Datasheet: MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , TGPF30N43P , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 .
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