MSAHX75L60D PDF and Equivalents Search

 

MSAHX75L60D Specs and Replacement

Type Designator: MSAHX75L60D

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 4000pF pF

Package: SMD-P

 MSAHX75L60D Substitution

- IGBT ⓘ Cross-Reference Search

 

MSAHX75L60D datasheet

 4.1. Size:34K  microsemi
 msahx75l60c.pdf pdf_icon

MSAHX75L60D

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAHX75L60C Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque... See More ⇒

 9.1. Size:35K  microsemi
 msahx60f60a.pdf pdf_icon

MSAHX75L60D

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGX60F60A FAX (714) 966-5256 MSAHX60F60A Features 600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 60 Amps Hermetically sealed, surface mount power package Low package inductance 2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa... See More ⇒

Specs: MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , TGAN20N135FD , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 .

Keywords - MSAHX75L60D transistor spec

 MSAHX75L60D cross reference
 MSAHX75L60D equivalent finder
 MSAHX75L60D lookup
 MSAHX75L60D substitution
 MSAHX75L60D replacement

 

 

 

 

↑ Back to Top
.