All IGBT. MSAHX75L60D Datasheet

 

MSAHX75L60D Datasheet and Replacement


   Type Designator: MSAHX75L60D
   Type: IGBT
   Type of IGBT Channel: P
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 4000pF pF
   Package: SMD-P
      - IGBT Cross-Reference

 

MSAHX75L60D Datasheet (PDF)

 4.1. Size:34K  microsemi
 msahx75l60c.pdf pdf_icon

MSAHX75L60D

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAHX75L60CFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque

 9.1. Size:35K  microsemi
 msahx60f60a.pdf pdf_icon

MSAHX75L60D

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGX60F60AFAX: (714) 966-5256MSAHX60F60AFeatures600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof60 Amps Hermetically sealed, surface mount power package Low package inductance2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa

Datasheet: MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , IHW40T60 , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 .

History: IXSX50N60AU1 | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | 7MBR100VB060-50 | MMG200Q120B6TC | IXGT40N60C2D1

Keywords - MSAHX75L60D transistor datasheet

 MSAHX75L60D cross reference
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