NTE3311 PDF and Equivalents Search

 

NTE3311 Specs and Replacement

Type Designator: NTE3311

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO3P

 NTE3311 Substitution

- IGBT ⓘ Cross-Reference Search

 

NTE3311 datasheet

 ..1. Size:43K  no
 nte3311.pdf pdf_icon

NTE3311

NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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NTE3311

NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .... See More ⇒

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NTE3311

NTE3310 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.1. Size:58K  1
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NTE3311

NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching Absolute Maximum Ratings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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Specs: MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , IHW40T60 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B .

History: MSAHX75L60D

Keywords - NTE3311 transistor spec

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