NTE3311 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NTE3311
Тип транзистора: IGBT
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 150
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 25
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 3
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 300
Тип корпуса: TO3P
NTE3311 Datasheet (PDF)
nte3311.pdf
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NTE3311Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3312.pdf
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NTE3312Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .
nte3310.pdf
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NTE3310Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3321.pdf
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NTE3321Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingAbsolute Maximum Ratings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3323.pdf
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NTE3323Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3302.pdf
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NTE3302Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3322.pdf
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NTE3322Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3PBLFeatures:D Enhancemnt Mode TypeD FRD Included Bwetwen Emitter and CollectorD High SpeedD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .
nte3301.pdf
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NTE3301Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3300.pdf
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NTE3300Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3320.pdf
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NTE3320Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D Fourth Generation IGBTD Enhancement Mode TypeD High SpeedD Low Switching LossD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .
nte3303.pdf
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NTE3303Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Другие IGBT... MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , CRG75T60AK3HD , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B .
![NTE3311](https://alltransistors.com/images/us.png)
![NTE3311](https://alltransistors.com/images/es.png)
![NTE3311](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ