PPNGZ52F120B Datasheet. Specs and Replacement

Type Designator: PPNGZ52F120B  📄📄 

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 52 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 110 nS

Coesⓘ - Output Capacitance, typ: 2200pF pF

Package: TO258

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PPNGZ52F120B datasheet

 3.1. Size:88K  microsemi
 ppngz52f120a.pdf pdf_icon

PPNGZ52F120B

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120... See More ⇒

Specs: NTE3311, NTE3312, NTE3320, NTE3321, NTE3322, NTE3323, P12N60C3, PPNGZ52F120A, RJH60F5DPQ-A0, PPNHZ52F120A, PPNHZ52F120B, RCH10N35, RCH10N40, RCH10N40A, RCM10N35, RCM10N40, RCM10N40A

Keywords - PPNGZ52F120B transistor spec

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