PPNGZ52F120B PDF and Equivalents Search

 

PPNGZ52F120B PDF Specs and Replacement


   Type Designator: PPNGZ52F120B
   Type: IGBT
   Type of IGBT Channel: P

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 52 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   tr ⓘ - Rise Time, typ: 110 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Package: TO258
 

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PPNGZ52F120B PDF specs

 3.1. Size:88K  microsemi
 ppngz52f120a.pdf pdf_icon

PPNGZ52F120B

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120... See More ⇒

Specs: NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , RJH60F5DPQ-A0 , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A .

Keywords - PPNGZ52F120B transistor spec

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