All IGBT. PPNHZ52F120A Datasheet

 

PPNHZ52F120A IGBT. Datasheet pdf. Equivalent


   Type Designator: PPNHZ52F120A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 110 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO258

 PPNHZ52F120A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PPNHZ52F120A Datasheet (PDF)

 ..1. Size:88K  microsemi
 ppnhz52f120a.pdf

PPNHZ52F120A PPNHZ52F120A

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

Datasheet: NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , IRG4PC50UD , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 .

 

 
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