RCM10N40A Datasheet. Specs and Replacement

Type Designator: RCM10N40A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 800pF pF

Package: TO204

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RCM10N40A datasheet

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Specs: PPNGZ52F120B, PPNHZ52F120A, PPNHZ52F120B, RCH10N35, RCH10N40, RCH10N40A, RCM10N35, RCM10N40, NCE80TD65BT, RCP10N35, RCP10N40, RCP10N40A, OST50N65H4EWF, SGF15N90D, SGF30N60RUF, SGF30N60RUFD, SGF40N60UF

Keywords - RCM10N40A transistor spec

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