All IGBT. SGF15N90D Datasheet

 

SGF15N90D Datasheet and Replacement


   Type Designator: SGF15N90D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 180 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Qg ⓘ - Total Gate Charge, typ: 60 nC
   Package: TO3PF
 

 SGF15N90D substitution

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SGF15N90D Datasheet (PDF)

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SGF15N90D

IGBTSGF15N90DGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High speed switchinggate structure provide superior conduction and switching Low saturation voltage : VCE(sat) = 2.0 V @ IC = 15Aperformance in comparison with transistors having a planar High input impedancegate structure. They also have wide noise immunity. These Bu

Datasheet: RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , GT60N321 , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF .

Keywords - SGF15N90D transistor datasheet

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