SGF15N90D Specs and Replacement
Type Designator: SGF15N90D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 180 nS
Coesⓘ - Output Capacitance, typ: 80 pF
Package: TO3PF
SGF15N90D Substitution - IGBT ⓘ Cross-Reference Search
SGF15N90D datasheet
sgf15n90d.pdf
IGBT SGF15N90D General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench High speed switching gate structure provide superior conduction and switching Low saturation voltage VCE(sat) = 2.0 V @ IC = 15A performance in comparison with transistors having a planar High input impedance gate structure. They also have wide noise immunity. These Bu... See More ⇒
Specs: RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , IRG4PF50W , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF .
Keywords - SGF15N90D transistor spec
SGF15N90D cross reference
SGF15N90D equivalent finder
SGF15N90D lookup
SGF15N90D substitution
SGF15N90D replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
кт630 | 2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet