SGF15N90D Datasheet. Specs and Replacement

Type Designator: SGF15N90D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 83 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 180 nS

Coesⓘ - Output Capacitance, typ: 80 pF

Package: TO3PF

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SGF15N90D datasheet

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SGF15N90D

IGBT SGF15N90D General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench High speed switching gate structure provide superior conduction and switching Low saturation voltage VCE(sat) = 2.0 V @ IC = 15A performance in comparison with transistors having a planar High input impedance gate structure. They also have wide noise immunity. These Bu... See More ⇒

Specs: RCH10N40A, RCM10N35, RCM10N40, RCM10N40A, RCP10N35, RCP10N40, RCP10N40A, OST50N65H4EWF, AUIRGPS4067D1, SGF30N60RUF, SGF30N60RUFD, SGF40N60UF, SGF40N60UFD, SGF5N150UF, SGF80N60UF, SGF80N60UFD, SGH10N120RUF

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