SGF5N150UF IGBT. Datasheet pdf. Equivalent
Type Designator: SGF5N150UF
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 62.5
Maximum Collector-Emitter Voltage |Vce|, V: 1500
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 10
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 4
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 30
Package: TO3PF
SGF5N150UF Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGF5N150UF Datasheet (PDF)
sgf5n150uf.pdf

IGBTSGF5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGF5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co
Datasheet: RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , GT40QR21 , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD .



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IGBT: SGT10U60SDM2D | SGTQ40T120SDB2P7 | SGTQ30NE40I1DTR | SGTQ200V75SDB1PWD | SGTQ200V75SDB1PWA | SGTQ160V65SDB1APWA | SGTQ160V65SDB1APW | SGTP75V65SDS1P7 | SGTP75V65SDB1P7 | SGTP75V65FDB1P7 | SGTP75V65FDB1P4B