All IGBT. SGF5N150UF Datasheet

 

SGF5N150UF IGBT. Datasheet pdf. Equivalent


   Type Designator: SGF5N150UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 62.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 30 nC
   Package: TO3PF

 SGF5N150UF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGF5N150UF Datasheet (PDF)

 ..1. Size:292K  fairchild semi
 sgf5n150uf.pdf

SGF5N150UF SGF5N150UF

IGBTSGF5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGF5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co

Datasheet: RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , YGW75N65F1 , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD .

 

 
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