SGF5N150UF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGF5N150UF Specs and Replacement

Type Designator: SGF5N150UF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 62.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO3PF

SGF5N150UF Substitution

- IGBT ⓘ Cross-Reference Search

SGF5N150UF datasheet

..1. Size:292K fairchild semi
sgf5n150uf.pdf pdf_icon

IGBT SGF5N150UF General Description Features Fairchild s Insulated Gate Bipolar Transistor (IGBT) High Speed Switching provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 4.7 V @ IC = 5A SGF5N150UF is designed for the Switching Power High Input Impedance Supply applications. Application Switching Power Supply - High Input Voltage Off-line Co... See More ⇒

Specs: RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , KGF75N65KDF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD .