All IGBT. SGF5N150UF Datasheet


SGF5N150UF IGBT. Datasheet pdf. Equivalent

Type Designator: SGF5N150UF

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 62.5

Maximum Collector-Emitter Voltage |Vce|, V: 1500

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 10

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4.7

Maximum G-E Threshold Voltag |VGE(th)|, V: 4

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 15

Collector Capacity (Cc), typ, pF: 130

Total Gate Charge (Qg), typ, nC: 30

Package: TO3PF

SGF5N150UF Transistor Equivalent Substitute - IGBT Cross-Reference Search


SGF5N150UF Datasheet (PDF)

 ..1. Size:292K  fairchild semi


IGBTSGF5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGF5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co

Datasheet: RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , GT40QR21 , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD .


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