SGF5N150UF Datasheet and Replacement
Type Designator: SGF5N150UF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 62.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Qg ⓘ - Total Gate Charge, typ: 30 nC
Package: TO3PF
SGF5N150UF substitution
SGF5N150UF Datasheet (PDF)
sgf5n150uf.pdf
IGBTSGF5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGF5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co
Datasheet: RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , FGPF4533 , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD .
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