SGH25N120RUF Specs and Replacement
Type Designator: SGH25N120RUF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Package: TO3P
SGH25N120RUF Substitution - IGBT ⓘ Cross-Reference Search
SGH25N120RUF datasheet
sgh25n120ruf.pdf
IGBT SGH25N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provides low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 25A designed f... See More ⇒
Specs: SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , FGH60N60SMD , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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