SGH25N120RUF Datasheet. Specs and Replacement

Type Designator: SGH25N120RUF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO3P

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SGH25N120RUF datasheet

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SGH25N120RUF

IGBT SGH25N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provides low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 25A designed f... See More ⇒

Specs: SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD, SGH15N60RUFD, SGH20N120RUF, SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, FGH60N60SMD, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD

Keywords - SGH25N120RUF transistor spec

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