SGI25N40 PDF and Equivalents Search

 

SGI25N40 Specs and Replacement

Type Designator: SGI25N40

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 500(max) nS

Package: I2PAK

 SGI25N40 Substitution

- IGBT ⓘ Cross-Reference Search

 

SGI25N40 datasheet

 ..1. Size:105K  samsung
 sgi25n40.pdf pdf_icon

SGI25N40

N-CHANNEL IGBT SGI25N40 FEATURES I2 - PAK * High Input Impedance * High Peak Current Capability(170A) * Easy Drive by Gate Voltage C APPLICATIONS * STROBE FLASH G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 400 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 25 A ICM Pulsed Collector Curren... See More ⇒

Specs: SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , CRG40T60AN3H , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D .

History: SGH30N60RUFD | SGL20N60RUFD | NGTB15N120IHRWG | MMG50S120B6HN

Keywords - SGI25N40 transistor spec

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