All IGBT. SGI25N40 Datasheet

 

SGI25N40 IGBT. Datasheet pdf. Equivalent


   Type Designator: SGI25N40
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 500(max) nS
   Package: I2PAK

 SGI25N40 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGI25N40 Datasheet (PDF)

 ..1. Size:105K  samsung
sgi25n40.pdf

SGI25N40
SGI25N40

N-CHANNEL IGBT SGI25N40FEATURESI2 - PAK* High Input Impedance* High Peak Current Capability(170A)* Easy Drive by Gate VoltageCAPPLICATIONS* STROBE FLASHG EABSOLUTE MAXIMUM RATINGS SymbolCharacteristics UnitRatingVCESCollector-Emitter Voltage V400VGEGate - Emitter Voltage V 25ICContinuous Collector Current Tc = 25 25AICM Pulsed Collector Curren

Datasheet: SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , IXGH60N60 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D .

 

 
Back to Top